검색결과 : 7건
No. | Article |
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1 |
Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography Brose S, Danylyuk S, Juschkin L, Dittberner C, Bergmann K, Moers J, Panaitov G, Trellenkamp S, Loosen P, Grutzmacher D Thin Solid Films, 520(15), 5080, 2012 |
2 |
Integration of MOSFETs with SiGe dots as stressor material Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E Solid-State Electronics, 60(1), 75, 2011 |
3 |
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET Moers J, Gerharz J, Rinke G, Mussler G, Trellenkamp S, Grutzmacher D Thin Solid Films, 518(9), 2565, 2010 |
4 |
Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures Kluth SM, Alvarez D, Trellenkamp S, Moers J, Mantl S Journal of Vacuum Science & Technology B, 23(1), 76, 2005 |
5 |
Selectively grown vertical Si MOS transistor with reduced overlap capacitances Klaes D, Moers J, Tonnesmann A, Wickenhauser S, Vescan L, Marso M, Grabolla T, Grimm M, Luth H Thin Solid Films, 336(1-2), 306, 1998 |
6 |
Vertical Si P-MOS Transistor Selectively Grown by Low-Pressure Chemical-Vapor-Deposition Loo R, Vescan L, Behammer D, Moers J, Grabolla T, Langen W, Klaes D, Zastrow U, Kordos P Thin Solid Films, 294(1-2), 267, 1997 |
7 |
Strain Dependence of the Valence-Band Offset in Arsenide Compound Heterojunctions Determined by Photoelectron-Spectroscopy Ohler C, Moers J, Forster A, Luth H Journal of Vacuum Science & Technology B, 13(4), 1728, 1995 |