화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography
Brose S, Danylyuk S, Juschkin L, Dittberner C, Bergmann K, Moers J, Panaitov G, Trellenkamp S, Loosen P, Grutzmacher D
Thin Solid Films, 520(15), 5080, 2012
2 Integration of MOSFETs with SiGe dots as stressor material
Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E
Solid-State Electronics, 60(1), 75, 2011
3 Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
Moers J, Gerharz J, Rinke G, Mussler G, Trellenkamp S, Grutzmacher D
Thin Solid Films, 518(9), 2565, 2010
4 Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
Kluth SM, Alvarez D, Trellenkamp S, Moers J, Mantl S
Journal of Vacuum Science & Technology B, 23(1), 76, 2005
5 Selectively grown vertical Si MOS transistor with reduced overlap capacitances
Klaes D, Moers J, Tonnesmann A, Wickenhauser S, Vescan L, Marso M, Grabolla T, Grimm M, Luth H
Thin Solid Films, 336(1-2), 306, 1998
6 Vertical Si P-MOS Transistor Selectively Grown by Low-Pressure Chemical-Vapor-Deposition
Loo R, Vescan L, Behammer D, Moers J, Grabolla T, Langen W, Klaes D, Zastrow U, Kordos P
Thin Solid Films, 294(1-2), 267, 1997
7 Strain Dependence of the Valence-Band Offset in Arsenide Compound Heterojunctions Determined by Photoelectron-Spectroscopy
Ohler C, Moers J, Forster A, Luth H
Journal of Vacuum Science & Technology B, 13(4), 1728, 1995