화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 An O-2(+) probe energy study for boron quantification in Si1-xGex (0 <= x <= 1) using secondary ion mass spectrometry
Morris RJH
Applied Surface Science, 390, 778, 2016
2 Comparison of electron-phonon and hole-phonon energy loss rates in silicon
Richardson-Bullock JS, Prest MJ, Shah VA, Gunnarsson D, Prunnila M, Dobbie A, Myronov M, Morris RJH, Whall TE, Parker EHC, Leadley DR
Solid-State Electronics, 103, 40, 2015
3 Low energy SIMS characterization of passive oxide films formed on a low-nickel stainless steel in alkaline media.
Fajardo S, Bastidas DM, Ryan MP, Criado M, McPhail DS, Morris RJH, Bastidas JM
Applied Surface Science, 288, 423, 2014
4 Ultra high hole mobilities in a pure strained Ge quantum well
Mironov OA, Hassan AHA, Morris RJH, Dobbie A, Uhlarz M, Chrastina D, Hague JP, Kiatgamolchai S, Beanland R, Gabani S, Berkutovh IB, Helmi M, Drachenko O, Myronov M, Leadley DR
Thin Solid Films, 557, 329, 2014
5 Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers
Dobbie A, Nguyen VH, Morris RJH, Liu XC, Myronov M, Leadley DR
Journal of the Electrochemical Society, 159(5), H490, 2012
6 Oxygen surface exchange and diffusion studies of La2Mo2O9 in different exchange atmospheres
Liu J, Chater RJ, Morris RJH, Skinner SJ
Solid State Ionics, 189(1), 39, 2011
7 Anomalous Oxidation States in Multilayers for Fuel Cell Applications
Perkins JM, Fearn S, Cook SN, Srinivasan R, Rouleau CM, Christen HM, West GD, Morris RJH, Fraser HL, Skinner SJ, Kilner JA, McComb DW
Advanced Functional Materials, 20(16), 2664, 2010
8 Surface enhancement of oxygen exchange and diffusion in the ionic conductor La2Mo2O9
Liu J, Chater RJ, Hagenhoff B, Morris RJH, Skinner SJ
Solid State Ionics, 181(17-18), 812, 2010
9 Sodium and hydrogen analysis of room temperature glass corrosion using low energy CsSIMS
Fearn S, McPhail DS, Morris RJH, Dowsett MG
Applied Surface Science, 252(19), 7070, 2006
10 Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials
Morris RJH, Dowsett MG, Chang RJH
Applied Surface Science, 252(19), 7221, 2006