검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
High growth rates (> 30 mu m/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor Myers RL, Shishkin Y, Kordina O, Saddow SE Journal of Crystal Growth, 285(4), 486, 2005 |
| 2 |
Hydrogen gas sensors using 3C-SiC/Si epitaxial layers Fawcett TJ, Wolan JT, Myers RL, Walker J, Saddow SE Materials Science Forum, 457-460, 1499, 2004 |
| 3 |
Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates Myers RL, Saddow SE, Rao S, Hobart KD, Fatemi M, Kub FJ Materials Science Forum, 457-460, 1511, 2004 |