| 1 |
Impacts of substrate bias and dilution gas on the properties of Si-incorporated diamond-like carbon films by plasma deposition using organosilane as a Si source
Nakazawa H, Miura S, Nakamura K, Nara Y
Thin Solid Films, 654, 38, 2018 |
| 2 |
Coproduction of acetic acid and electricity by application of microbial fuel cell technology to vinegar fermentation
Tanino T, Nara Y, Tsujiguchi T, Ohshima T
Journal of Bioscience and Bioengineering, 116(2), 219, 2013 |
| 3 |
Evolution of metal-compound residues on the walls of plasma etching reactor and their effect on critical dimensions of high-k/metal gate
Iwakoshi T, Ono T, Aoyama T, Nara Y, Ohji Y
Journal of Vacuum Science & Technology A, 27(3), 537, 2009 |
| 4 |
Improving threshold voltage and device performance of gate-first HfSiON/Metal gate n-MOSFETs by an ALD La2O3 capping layer
Kamiyama S, Kurosawa E, Nara Y
Journal of the Electrochemical Society, 155(6), H373, 2008 |
| 5 |
Improvement in positive-bias-temperature-instabilities reliability and device performance of TaSiN/ HfSiON gate stacks with high temperature post-nitridation annealing
Kamiyama S, Miura T, Nara Y
Electrochemical and Solid State Letters, 10(9), H278, 2007 |
| 6 |
Impact of O-3 concentration on ultrathin HfO2 films deposited on HF-cleaned silicon using atomic layer deposition with Hf[N(CH3)(C2H5)](4)
Kamiyama S, Miura T, Nara Y
Electrochemical and Solid State Letters, 9(9), G285, 2006 |
| 7 |
High-throughput sodium dodecyl sulfate polyacrylamide gel electrophoresis by linking conventional gel plates with automated liquid handier via Gel Adaptor
Sugawa S, Kawano T, Nara Y, Isomura T
Electrophoresis, 27(7), 1300, 2006 |
| 8 |
Comparison of the electrical properties of poly-Si/Hf-silicate gate stacks fabricated by ALD employing BDMAS and TDMAS precursors
Kamiyama S, Miura T, Nara Y
Journal of the Electrochemical Society, 153(3), G187, 2006 |
| 9 |
Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks
Shiraishi K, Yamada K, Torii K, Akasaka Y, Nakajima K, Konno M, Chikyow T, Kitajima H, Afikado T, Nara Y
Thin Solid Films, 508(1-2), 305, 2006 |
| 10 |
Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)(2)](2) and SiH[N(CH3)(2)](3) precursors
Kamiyama S, Miura T, Nara Y
Thin Solid Films, 515(4), 1517, 2006 |
