검색결과 : 10건
No. | Article |
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1 |
Influence of iridium on the reactivity of LaFeO3 base perovskites Kindermann L, Das D, Bahadur D, Nickel H Solid State Ionics, 106(1-2), 165, 1998 |
2 |
Interfacial Reaction and Adhesion Between SiC and Thin Sputtered Nickel Films Lim CS, Nickel H, Naoumidis A, Gyarmati E Journal of Materials Science, 32(24), 6567, 1997 |
3 |
Chemical Compatibility of (La0.6Ca0.4)(X)Fe(0.8)M(0.2)O(3) with Yttria-Stabilized Zirconia Kindermann L, Das D, Nickel H, Hilpert K, Appel CC, Poulson FW Journal of the Electrochemical Society, 144(2), 717, 1997 |
4 |
Diagnostics of a Radiofrequency Plasma Expanding Through a Nozzle (Petn) at Low-Pressure Avni R, Miralai SF, Prevot F, Morvan D, Amoroux J, Nickel H Plasma Chemistry and Plasma Processing, 17(4), 467, 1997 |
5 |
Lamno3 Perovskite Thin-Film Deposition, from Aqueous Nitrate Solutions of La and Mn, in a Low-Pressure Plasma Expanded Through a Nozzle (Petn) Miralai SF, Avni R, Francke E, Morvan D, Amouroux J, Nickel H Thin Solid Films, 303(1-2), 17, 1997 |
6 |
Interface Structure and Reaction-Kinetics Between SiC and Thick Cobalt Foils Lim CS, Nickel H, Naoumidis A, Gyarmati E Journal of Materials Science, 31(16), 4241, 1996 |
7 |
Chemical Compatibility of the LaFeO3 Base Perovskites (La0.6Sr0.4)(Z)Fe(0.8)M(0.2)O(3-Delta) (Z=1, 0.9 M=cr, Mn, Co, Ni) with Yttria-Stabilized Zirconia Kindermann L, Das D, Nickel H Solid State Ionics, 89(3-4), 215, 1996 |
8 |
Interfacial Reaction and Adhesion Between SiC and Thin Sputtered Cobalt Films Lim CS, Nickel H, Naoumidis A, Gyarmati E Journal of Materials Science, 30(15), 3874, 1995 |
9 |
The Influence of Implanted Chromium and Yttrium on the Oxidation Behavior of TiAl-Based Intermetallics Gil A, Rajchel B, Zheng N, Quadakkers WJ, Nickel H Journal of Materials Science, 30(22), 5793, 1995 |
10 |
Online Studies of Plasma Surface Interactions Between a Radio-Frequency Plasma-Jet and 3 W/O Boron-Doped Graphite Samples Avni R, Erin J, Morvan D, Mabillerouger I, Amouroux J, Winter J, Nickel H Journal of Vacuum Science & Technology A, 13(4), 2093, 1995 |