검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation Nicoletti T, dos Santos SD, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C Solid-State Electronics, 91, 53, 2014 |
| 2 |
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications Sasaki KRA, Nicoletti T, Almeida LM, dos Santos SD, Nissimoff A, Aoulaiche M, Simoen E, Claeys C, Martino JA Solid-State Electronics, 97, 30, 2014 |