화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Effect of the number and position of nozzle holes on in- and near-nozzle dynamic characteristics of diesel injection
Moon S, Gao Y, Park S, Wang J, Kurimoto N, Nishijima Y
Fuel, 150, 112, 2015
2 Perturbation of Brain Oscillations after Ischemic Stroke: A Potential Biomarker for Post-Stroke Function and Therapy
Rabiller G, He JW, Nishijima Y, Wong A, Liu JL
International Journal of Molecular Sciences, 16(10), 25605, 2015
3 Plasmonic photo-thermoelectric energy converter with black-Si absorber
Komatsu R, Balcytis A, Seniutinas G, Yamamura T, Nishijima Y, Juodkazis S
Solar Energy Materials and Solar Cells, 143, 72, 2015
4 Cage-Catalyzed Knoevenagel Condensation under Neutral Conditions in Water
Murase T, Nishijima Y, Fujita M
Journal of the American Chemical Society, 134(1), 162, 2012
5 A modified zone growth method for an InGaAs single crystal
Nishijima Y, Tezuka H, Nakajima K
Journal of Crystal Growth, 280(3-4), 364, 2005
6 Vickers hardness and deformation of Ni/Cu nano-multilayers electrodeposited on copper substrates
Kaneko Y, Mizuta Y, Nishijima Y, Hashimoto S
Journal of Materials Science, 40(12), 3231, 2005
7 Effect of a vacuum-deposited metal film on the CV of the Li insertion/extraction reaction at a graphitized carbon fiber electrode
Suzuki J, Yoshida M, Nishijima Y, Sekine K, Takamura T
Electrochimica Acta, 47(24), 3881, 2002
8 InGaAs zone growth single crystal with convex solid-liquid interface toward the melt
Nishijima Y, Otsubo K, Tezuka H, Nakajima K, Ishikawa H
Journal of Crystal Growth, 245(3-4), 228, 2002
9 InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method
Nishijima Y, Nakajima K, Otsubo K, Ishikawa H
Journal of Crystal Growth, 208(1-4), 171, 2000
10 In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy
Kitano Y, Kuriyama R, Kitada T, Shimomura S, Hiyamizu S, Nishijima Y, Ishikawa H
Journal of Vacuum Science & Technology B, 18(3), 1576, 2000