화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Large area SiC epitaxial layer growth in a warm-wall planetary VPE reactor
Burk AA, O'Loughlin MJ, Paisley MJ, Powell AR, Brady MF, Leonard RT, Muller S, Allen ST
Materials Science Forum, 483, 137, 2005
2 Development of epitaxial SiC processes suitable for bipolar power devices
Sumakeris JJ, Das MK, Ha S, Hurt E, Irvine K, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, Carter CH
Materials Science Forum, 483, 155, 2005
3 Multi-wafer VPE growth and characterization of SiC epitaxial layers
Nordby HD, O'Loughlin MJ, MacMillan MF, Burk AA, Oliver JD
Materials Science Forum, 338-3, 173, 2000