검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Physical properties of InN with the band gap energy of 1.1eV Inushima T, Mamutin VV, Vekshin VA, Ivanov SV, Sakon T, Motokawa M, Ohoya S Journal of Crystal Growth, 227, 481, 2001 |
| 2 |
Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma Inushima T, Ashino T, Murano K, Shiraishi T, Davydov VY, Ohoya S Journal of Crystal Growth, 209(2-3), 406, 2000 |
| 3 |
Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD Tanaka Y, Hasebe Y, Inushima T, Sandhu A, Ohoya S Journal of Crystal Growth, 209(2-3), 410, 2000 |