| 1 |
The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs
Lee SM, Lee HD, Ok I, Oh J
Solid-State Electronics, 114, 167, 2015 |
| 2 |
Solution processed thin films of Nb-doped TiO2 nanoparticles as hole blocking layer for organic solar cells
Lee W, Kim I, Ok I, Ahn D, Lee H, Kim JH, Kim K
Thin Solid Films, 553, 161, 2014 |
| 3 |
(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
Young CD, Akarvardar K, Baykan MO, Matthews K, Ok I, Ngai T, Ang KW, Pater J, Smith CE, Hussain MM, Majhi P, Hobbs C
Solid-State Electronics, 78, 2, 2012 |
| 4 |
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors
Oh J, Huang J, Chen YT, Ok I, Jeon K, Lee SH, Sassman B, Loh WY, Lee HD, Ko DH, Majhi P, Kirsch P, Jammy R
Thin Solid Films, 520(1), 442, 2011 |
| 5 |
Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
Zhu F, Zhao H, Ok I, Kim HS, Yum J, Lee JC, Goel N, Tsai W, Gaspe CK, Santos MB
Electrochemical and Solid State Letters, 12(4), H131, 2009 |
| 6 |
Inversion-type InP MOSFETs with EOT of 21 angstrom using atomic layer deposited Al2O3 gate dielectric
Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang MH, Yum JH, Banerjee SK, Lee JC
Electrochemical and Solid State Letters, 11(8), H233, 2008 |
| 7 |
Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer
Il Park S, Ok I, Kim HS, Zhu F, Zhang M, Yum JH, Han Z, Lee JC
Journal of Vacuum Science & Technology B, 26(2), 624, 2008 |
| 8 |
Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK
Journal of Vacuum Science & Technology B, 25(3), 1098, 2007 |
| 9 |
Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition
Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC
Journal of Vacuum Science & Technology B, 25(4), 1491, 2007 |
