검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Analysis of Functionalization Degree of Single-Walled Carbon Nanotubes Having Various Substituents Maeda Y, Saito K, Akamatsu N, Chiba Y, Ohno S, Okui Y, Yamada M, Hasegawa T, Kako M, Akasaka T Journal of the American Chemical Society, 134(43), 18101, 2012 |
| 2 |
Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral grown on patterned Si(111) Lee CJ, Pezzotti G, Okui Y, Nishino S Applied Surface Science, 228(1-4), 10, 2004 |
| 3 |
Pendeo epitaxial growth of 3C-SiC on Si substrates Shoji A, Okui Y, Nishiguchi T, Ohshima S, Nishino S Materials Science Forum, 457-460, 257, 2004 |
| 4 |
Lateral over-growth of 3C-SiC on patterned Si(111) substrates Nishino S, Jacob C, Okui Y, Ohshima S, Masuda Y Journal of Crystal Growth, 237, 1250, 2002 |
| 5 |
Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 279, 2002 |
| 6 |
Selective epitaxial growth of pyramidal 3C-SiC on patterned Si substrate Okui Y, Jacob C, Ohshima S, Nishino S Materials Science Forum, 389-3, 331, 2002 |
| 7 |
Control of pendeo epitaxial growth of 3C-SiC on silicon substrate Okui Y, Jacob C, Ohshima S, Nishino S Materials Science Forum, 433-4, 209, 2002 |
| 8 |
Dry-Cleaning for Fe Contaminants on Si and SiO2 Surfaces with Silicon Chlorides Sugino R, Okui Y, Shigeno M, Ohkubo S, Takasaki K, Ito T Journal of the Electrochemical Society, 144(11), 3984, 1997 |
| 9 |
Removal of Fe Contaminants in SiO2 Layers with Successive Processing of Poly-Si Deposition and Cl-Radical Etching Sugino R, Tada Y, Ito T, Okui Y, Sakuma J Journal of the Electrochemical Society, 144(11), 4059, 1997 |