화학공학소재연구정보센터
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No. Article
1 Faceting and nanostructure effects in Si and SiGe epitaxy
Dutartre D, Seiss B, Campidelli Y, Pellissier-Tanon D, Barge D, Pantel R
Thin Solid Films, 520(8), 3163, 2012
2 FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, Tosti L, Barnola S, Salvetat T, Garros X, Casse M, Allain F, Loubet N, Pham-Nguyen L, Deloffre E, Gros-Jean M, Beneyton R, Laviron C, Marin M, Leyris C, Haendler S, Leverd F, Gouraud P, Scheiblin P, Clement L, Pantel R, Deleonibus S, Skotnicki T
Solid-State Electronics, 53(7), 730, 2009
3 Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution
Bidal G, Loubet N, Fenouillet-Beranger C, Denorme S, Perreau P, Fleury D, Clement L, Laviron C, Leverd F, Gouraud P, Barnola S, Beneyton R, Torres A, Duluard C, Chapon JD, Orlando B, Salvetat T, Grosjean M, Deloffre E, Pantel R, Dutartre D, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 53(7), 735, 2009
4 Pore sealing of a porous dielectric by using a thin PECVD a-SiC : H conformal liner
Jousseaume V, Fayolle M, Guedj C, Haumesser PH, Huguet C, Pierre F, Pantel R, Feldis H, Passemard G
Journal of the Electrochemical Society, 152(10), F156, 2005
5 Emerging silicon-on-nothing (SON) devices technology
Monfray S, Skotnicki T, Fenouillet-Beranger C, Carriere N, Chanemougame D, Morand Y, Descombes S, Talbot A, Dutartre D, Jenny C, Mazoyer P, Palla R, Leverd F, Le Friec Y, Pantel R, Borel S, Louis D, Buffet N
Solid-State Electronics, 48(6), 887, 2004