| 1 |
Morphology and integration of rough polycrystalline silicon films for DRAM storage cell applications
Banerjee A, Crenshaw DL, Wise RL, Khamankar RB, Pas MF
Journal of the Electrochemical Society, 146(6), 2289, 1999 |
| 2 |
Selective hemispherical grained polysilicon transformation for 256 MB, 1 GB dynamic random access memory and beyond
Mansoori MM, Banerjee A, Shimizu A, Mori Y, Wise RL, Pas MF, Chatterjee B
Journal of the Electrochemical Society, 146(10), 3827, 1999 |
| 3 |
Effects of Drying Methods and Wettability of Silicon on the Formation of Water Marks in Semiconductor Processing
Park JG, Pas MF
Journal of the Electrochemical Society, 142(6), 2028, 1995 |
| 4 |
Effect of Initial High-Temperature Annealing and Gettering Processes on the Refresh Time of High-Density Dynamic Random-Access Memory Devices
Kim SS, Mckee WR, Pas MF, Wijaranakula W
Journal of the Electrochemical Society, 142(10), 3534, 1995 |
| 5 |
Heated SCL Solution for Selective Etching and Resist Particulate Removal
Hossain SD, Pas MF
Journal of the Electrochemical Society, 140(12), 3604, 1993 |
