검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Indium local geometry in In-Sb-Te thin films using XANES and DFT calculations Bilovol V, Rebaza AVG, Navarro AMM, Errico L, Fontana M, Arcondo B Applied Surface Science, 425, 1066, 2017 |
| 2 |
Forming operation in Ge-rich GexSbyTez phase change memories Palumbo E, Zuliani P, Borghi M, Annunziata R Solid-State Electronics, 133, 38, 2017 |
| 3 |
Engineering of chalcogenide materials for embedded applications of Phase Change Memory Zuliani P, Palumbo E, Borghi M, Libera GD, Annunziata R Solid-State Electronics, 111, 27, 2015 |
| 4 |
Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices Wright CD, Hosseini P, Diosdado JAV Advanced Functional Materials, 23(18), 2248, 2013 |
| 5 |
Scanning probe memories - Technology and applications Wright CD, Aziz MM, Shah P, Wang L Current Applied Physics, 11(2), E104, 2011 |
| 6 |
Transient effects in partial-RESET programming of phase-change memory cells Braga S, Cabrini A, Torelli G Solid-State Electronics, 65-66, 250, 2011 |
| 7 |
Phase change memory technology Burr GW, Breitwisch MJ, Franceschini M, Garetto D, Gopalakrishnan K, Jackson B, Kurdi B, Lam C, Lastras LA, Padilla A, Rajendran B, Raoux S, Shenoy RS Journal of Vacuum Science & Technology B, 28(2), 223, 2010 |
| 8 |
Change of Damage Mechanism by the Frequency of Applied Pulsed DC in the Ge2Sb2Te5 Line Yang TY, Park IM, You HY, Oh SH, Yi KW, Joo YC Journal of the Electrochemical Society, 156(8), H617, 2009 |
| 9 |
Acid and Surfactant Effect on Chemical Mechanical Polishing of Ge2Sb2Te5 Wang LY, Liu B, Song ZT, Feng SL, Xiang YH, Zhang FX Journal of the Electrochemical Society, 156(9), H699, 2009 |
| 10 |
Phase-change memory technology with self-aligned mu Trench cell architecture for 90 nm node and beyond Pirovano A, Pellizzer F, Tortorelli I, Rigano A, Harrigan R, Magistretti M, Petruzza P, Varesi E, Redaelli A, Erbetta D, Marangon T, Bedeschi F, Fackenthal R, Atwood G, Bez R Solid-State Electronics, 52(9), 1467, 2008 |