화학공학소재연구정보센터
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No. Article
1 Preparation and photocatalytic performance of TiO2/PbTiO3 fiber composite enhanced by external force induced piezoelectric field
Bai Y, Zhao JZ, Li YY, Lv ZL, Lu K
Journal of the American Ceramic Society, 102(9), 5415, 2019
2 Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy
Avakyants LP, Aslanyan AE, Bokov PY, Chervyakov AV, Polozhentsev KY
Solid-State Electronics, 130, 45, 2017
3 Dielectric, ferroelectric and field-induced strain response of lead-free BaZrO3-modified Bi0.5Na0.5TiO3 ceramics
Rahman JU, Hussain A, Maqbool A, Song TK, Kim WJ, Kim SS, Kim MH
Current Applied Physics, 14(3), 331, 2014
4 Electroreflectance spectroscopy of compressively strained InGaN/GaN multi-quantum well structures
Tawfik WZ, Ryu HY, Lee JK
Current Applied Physics, 14(11), 1504, 2014
5 Characterization of InGaN-based photovoltaic devices by varying the indium contents
Huang CF, Hsieh WY, Hsieh BC, Hsieh CH, Lin CF
Thin Solid Films, 529, 278, 2013
6 Study of stimulated emission from InGaN/GaN multiple quantum well structures
Wang T, Parbrook PJ, Whitehead MA, Fan WH, Fox AM
Journal of Crystal Growth, 273(1-2), 48, 2004
7 Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure
Chen CC, Hsieh KL, Chi GC, Chuo CC, Chyi JI, Chang CA
Solid-State Electronics, 46(8), 1123, 2002
8 Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport
Pozina G, Bergman JP, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum, 353-356, 791, 2001
9 MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates
Kim J, Cho S, Sanz-Hervas A, Majerfeld A, Kim BW
Journal of Crystal Growth, 221, 525, 2000
10 The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers
Ballet P, Disseix P, Leymarie J, Vasson A, Vasson AM, Grey R
Thin Solid Films, 336(1-2), 354, 1998