화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application
Lee KH, Chang PC, Chang SJ, Su YK, Wu SL, Pilkuhn M
Materials Chemistry and Physics, 134(2-3), 899, 2012
2 High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method
Leung KK, Chan CP, Fong WK, Pilkuhn M, Schweizer H, Surya C
Journal of Crystal Growth, 298, 840, 2007