1 |
Regulation of expression of general components of the phosphoenolpyruvate: carbohydrate phosphotransferase system (PTS) by the global regulator SugR in Corynebacterium glutamicum Tanaka Y, Teramoto H, Inui M, Yukawa H Applied Microbiology and Biotechnology, 78(2), 309, 2008 |
2 |
Platinum silicide phase transformations controlled by a nanometric interfacial oxide layer Conforto E, Schmid PE Thin Solid Films, 516(21), 7467, 2008 |
3 |
Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors Wu HH, Chang RS, Horng GH Thin Solid Films, 466(1-2), 314, 2004 |
4 |
Interfacial composition and electrical properties of PtSi/Si1-xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) Li MC, Zhao LC, Chen XK Applied Surface Science, 219(3-4), 249, 2003 |
5 |
Topographical, compositional and schottky characterization of PtSi/Si schottky diodes Li MC, Zhao LC, Liu DG, Chen XK Materials Chemistry and Physics, 80(3), 620, 2003 |
6 |
Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector Lyu YT, Lee CT, Horng GJ, Ho C, Lee CY, Wu CS Materials Chemistry and Physics, 74(2), 177, 2002 |
7 |
Structure and electrical property of platinum film biased dc-sputter-deposited on silicon Kojima D, Makihara K, Shi J, Hashimoto M Applied Surface Science, 169, 320, 2001 |
8 |
Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector Horng GJ, Chang CY, Chang T, Ho C, Wu CS Materials Chemistry and Physics, 68(1-3), 17, 2001 |
9 |
The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector Horng GJ, Chang CY, Ho C, Lee CY, Huang TY Thin Solid Films, 374(1), 80, 2000 |
10 |
Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry Zhou SM, Hundhausen M, Stark T, Chen LY, Ley L Journal of Vacuum Science & Technology A, 17(1), 144, 1999 |