검색결과 : 596건
| No. | Article |
|---|---|
| 1 |
A general design guideline for strain-balanced quantum-wells toward high- efficiency photovoltaics Huang HH, Toprasertpong K, Delamarre A, Wilkins MM, Sugiyama M, Nakano Y Solar Energy, 206, 655, 2020 |
| 2 |
Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE Bucamp A, Coinon C, Codron JL, Troadec D, Wallart X, Desplanque L Journal of Crystal Growth, 512, 11, 2019 |
| 3 |
Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy Huang WG, Gu Y, Chen XY, Zhang J, Gong Q, Huang H, Ma YJ, Zhang YG Journal of Crystal Growth, 512, 61, 2019 |
| 4 |
Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with similar to 280 nm emission grown by plasma-assisted molecular beam epitaxy Aiello A, Pandey A, Bhattacharya A, Gim J, Liu XH, Laleyan DA, Hoyden R, Mi ZT, Bhattacharya P Journal of Crystal Growth, 508, 66, 2019 |
| 5 |
MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate Sugiyama H, Uchida K, Han X, Periyanayagam GK, Aikawa M, Hayasaka N, Shimomura K Journal of Crystal Growth, 507, 93, 2019 |
| 6 |
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E Journal of Crystal Growth, 507, 246, 2019 |
| 7 |
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J, Zikova M, Hajek F, Dominec F, Florini N, Komninou P, Ledoux G, Dujardin C Journal of Crystal Growth, 507, 310, 2019 |
| 8 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI Journal of Crystal Growth, 507, 357, 2019 |
| 9 |
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C Journal of Crystal Growth, 506, 8, 2019 |
| 10 |
Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD Niass MI, Zang JW, Lu ZQ, Du ZQ, Chen X, Qu YP, Wang F, Liu YH Journal of Crystal Growth, 506, 24, 2019 |