검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's) Chen CY, Wang WC, Chiou WH, Wang CK, Chuang HM, Cheng SY, Liu WC Solid-State Electronics, 46(9), 1289, 2002 |
| 2 |
InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources Velling P, Agethen M, Prost W, Tegude FJ Journal of Crystal Growth, 221, 722, 2000 |