검색결과 : 96건
| No. | Article |
|---|---|
| 1 |
Properties of materials for resistive RAM based on HfO2(first principles calculations) Balabai RM, Zalevskyi DV Molecular Crystals and Liquid Crystals, 700(1), 95, 2020 |
| 2 |
Properties of materials for resistive RAM based on HfO2(first principles calculations) Balabai RM, Zalevskyi DV Molecular Crystals and Liquid Crystals, 700(1), 95, 2020 |
| 3 |
Temperature dependence of magnetic properties on switching energy in magnetic tunnel junction devices with tilted magnetization Teso B, Kravenkit S, Sorn-in K, Kaewrawang A, Kruesubthaworn A, Siritaratiwat A, Mewes T, Mewes CKA, Surawanitkun C Applied Surface Science, 472, 36, 2019 |
| 4 |
Interfacial graphene modulated energetic behavior of the point-defect at the Au/HfO2 interface Zhu LG, Zhang XY, Zhou J, Sun ZM Applied Surface Science, 489, 608, 2019 |
| 5 |
High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film Ren SX, Dong WC, Tang H, Tang LZ, Li ZH, Sun Q, Yang HF, Yang ZG, Zhao JJ Applied Surface Science, 488, 92, 2019 |
| 6 |
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation Lee DK, Kim MH, Kim TH, Bang S, Choi YJ, Kim S, Cho S, Park BG Solid-State Electronics, 154, 31, 2019 |
| 7 |
Resistive random-access memory with an a-Si/SiNx double-layer Kwon HT, Lee WJ, Choi HS, Wee D, Park YJ, Kim B, Kim MH, Kim S, Park BG, Kim Y Solid-State Electronics, 158, 64, 2019 |
| 8 |
Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer Tao Y, Ding WT, Wang ZQ, Xu HY, Zhao XN, Li XH, Liu WZ, Ma JG, Liu YC Applied Surface Science, 440, 107, 2018 |
| 9 |
Superparamagnetic ground state of CoFeB/MgO magnetic tunnel junction with dual-barrier Tran TN, Lam TN, Yang CY, Lin WC, Chen PW, Tseng YC Applied Surface Science, 457, 529, 2018 |
| 10 |
A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation Kim TTH, Lee ZC, Do AT Solid-State Electronics, 139, 60, 2018 |