| 1 |
Epitaxial growth of Si and SiGe at temperatures lower than 500 degrees C with disilane and germane
Aubin J, Hartmann JM, Benevent V
Thin Solid Films, 602, 36, 2016 |
| 2 |
Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane
Abedin A, Moeen M, Cappetta C, Ostling M, Radamson HH
Thin Solid Films, 613, 38, 2016 |
| 3 |
Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition
Tan YH, Tan CS
Thin Solid Films, 520(7), 2711, 2012 |
| 4 |
Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 520(8), 3271, 2012 |
| 5 |
Embedding of reduced pressure-chemical vapor deposition grown Ge nanocrystals in a high quality SiO2 matrix for non-volatile memory applications
Masarotto L, Yckache K, Fanton A, Aussenac F, Fillot F
Thin Solid Films, 518(19), 5382, 2010 |
| 6 |
Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5)
Hartmann JM, Abbadie A, Rouchon D, Barnes JP, Mermoux M, Billon T
Thin Solid Films, 516(12), 4238, 2008 |
| 7 |
Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes
Hartmann JM, Damlencourt JF, Bogumilowicz Y, Holliger P, Rolland G, Billon T
Journal of Crystal Growth, 274(1-2), 90, 2005 |
| 8 |
Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates
Jahan C, Faynot O, Tosti L, Hartmann JM
Journal of Crystal Growth, 280(3-4), 530, 2005 |
| 9 |
Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure-chemical vapor deposition
Hartmann JM, Bertin F, Rolland G, Semeria MN, Bremond G
Thin Solid Films, 479(1-2), 113, 2005 |
| 10 |
Low thermal budget surface preparation of Si and SiGe
Abbadie A, Hartmann JM, Holliger P, Semeria MN, Besson P, Gentile P
Applied Surface Science, 225(1-4), 256, 2004 |
