| 1 |
Band gap tuning in Si-SiO2 nanocomposite: Interplay of confinement effect and surface/interface bonding
Rani E, Ingale A, Phase DM, Chaturvedi A, Mukherjee C, Joshi MP, Kukreja LM
Applied Surface Science, 425, 1089, 2017 |
| 2 |
Atomic insight into tribochemical wear mechanism of silicon at the Si/SiO2 interface in aqueous environment: Molecular dynamics simulations using ReaxFF reactive force field
Wen JL, Ma TB, Zhang WW, Psofogiannakis G, van Duin ACT, Chen L, Qian LM, Hu YZ, Lu XC
Applied Surface Science, 390, 216, 2016 |
| 3 |
Formation of an N-pair at the Si(001)/alpha-quartz interface
Kim GH, Jeong S
Current Applied Physics, 16(7), 805, 2016 |
| 4 |
Microscopic observation of lateral diffusion at Si-SiO2 interface by photoelectron emission microscopy using synchrotron radiation
Hirao N, Baba Y, Sekiguchi T, Shimoyama I, Honda M
Applied Surface Science, 258(3), 987, 2011 |
| 5 |
Effects of tunnel oxide process on SONOS flash memory characteristics
Li DH, Park IH, Yun JG, Park BG
Thin Solid Films, 518(9), 2509, 2010 |
| 6 |
Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films
Lee YM, Wu YD
Applied Surface Science, 254(15), 4591, 2008 |
| 7 |
Ab initio calculation of optical absorption and reflectivity of Si(001)/SiO2 superlattices with varying interfaces
Seino K, Wagner JM, Bechstedt F
Applied Surface Science, 255(3), 787, 2008 |
| 8 |
Anodic current transient for n-Si/SiO2 electrodes in HF solution: the relationship between the current and the interface structure
Bensliman F, Mizuta N, Matsumura M
Journal of Electroanalytical Chemistry, 568(1-2), 353, 2004 |
| 9 |
Turn-off current variation in drain-offset polysilicon thin film transistors
Lee IC, Ma TY
Thin Solid Films, 461(2), 336, 2004 |
| 10 |
Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics
da Silva EF, de Vasconcelos EA, Stosic BD
Applied Surface Science, 190(1-4), 30, 2002 |
