검색결과 : 31건
| No. | Article |
|---|---|
| 1 |
Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D'Arrigo G Journal of the Electrochemical Society, 157(4), H438, 2010 |
| 2 |
Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications Frewin CL, Locke C, Wang J, Spagnol P, Saddow SE Journal of Crystal Growth, 311(17), 4179, 2009 |
| 3 |
Electronic passivation of 3C-SiC(001) via hydrogen treatment Coletti C, Frewin CL, Hoff AM, Saddow SE Electrochemical and Solid State Letters, 11(10), H285, 2008 |
| 4 |
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus Rao S, Bergamini F, Nipoti R, Saddow SE Applied Surface Science, 252(10), 3837, 2006 |
| 5 |
High growth rates (> 30 mu m/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor Myers RL, Shishkin Y, Kordina O, Saddow SE Journal of Crystal Growth, 285(4), 486, 2005 |
| 6 |
Increased growth rate in a SiCCVD reactor using HCl as a growth additive Myers R, Kordina O, Shishkin Z, Rao S, Everly R, Saddow SE Materials Science Forum, 483, 73, 2005 |
| 7 |
Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers Mank H, Moisson C, Turover D, Twigg M, Saddow SE Materials Science Forum, 483, 197, 2005 |
| 8 |
Concentration of N and P in SIC investigated by time-of-flight secondary ion mass spectrometry (TOF-SIMS) Acarturk T, Semmelroth K, Pensl G, Saddow SE, Starke U Materials Science Forum, 483, 453, 2005 |
| 9 |
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C Bergamini A, Rao SP, Saddow SE, Nipoti R Materials Science Forum, 483, 629, 2005 |
| 10 |
Structure and morphology of 4H-SiC wafer surfaces after H-2-Etching Soubatch S, Saddow SE, Rao SP, Lee WY, Konuma M, Starke U Materials Science Forum, 483, 761, 2005 |