검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Selective epitaxial growth of B-doped SiGe and HCl etch Si for the formation of SiGe:B recessed source and drain (pMOS transistors) Radamson HH, Kolahdouz M, Ghandi R, Hallstedt J Thin Solid Films, 517(1), 84, 2008 |
| 2 |
SiGe quantum well thermistor materials Wissmar SGE, Radamsson HH, Yamamoto Y, Tillack B, Vieider C, Andersson JY Thin Solid Films, 517(1), 337, 2008 |