검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth Seta Y, Akiyama T, Pradipto AM, Nakamura K, Ito T Journal of Crystal Growth, 510, 7, 2019 |
| 2 |
Non-polar GaN thin films deposition on glass substrate at low temperatures by conventional RF sputtering Simanullang M, Wang ZH, Kawakami N, Ogata R, Yoshida T, Sugiyama M Thin Solid Films, 675, 1, 2019 |
| 3 |
GaN quantum dot polarity determination by X-ray photoelectron diffraction Romanyuk O, Bartos I, Brault J, De Mierry P, Paskova T, Jiricek P Applied Surface Science, 389, 1156, 2016 |
| 4 |
Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates. Caliebe M, Tandukar S, Cheng ZZ, Hocker M, Han YS, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K, Scholz F Journal of Crystal Growth, 440, 69, 2016 |
| 5 |
Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Lee HJ, Bae SY, Lekhal K, Mitsunari T, Tamura A, Honda Y, Amano H Journal of Crystal Growth, 454, 114, 2016 |
| 6 |
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si Hus JW, Chen CC, Lee MJ, Liu HH, Chyi JI, Huang MRS, Liu CP, Wei TC, He JH, Lai KY Advanced Materials, 27(33), 4845, 2015 |
| 7 |
Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (11(2)over-bar2) oriented GaN Caliebe M, Meisch T, Madel M, Scholz F Journal of Crystal Growth, 414, 100, 2015 |
| 8 |
Growth of semipolar (20(2)over-bar1) GaN layers on patterned silicon (114) 1 degrees off by Metal Organic Vapor Phase Epitaxy Khoury M, Leroux M, Nemoz M, Feuillet G, Zuniga-Perez J, Vennegues P Journal of Crystal Growth, 419, 88, 2015 |
| 9 |
Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres Yang JK, Wei TB, Huo ZQ, Hu Q, Zhang YH, Duan RF, Wang JX Journal of Crystal Growth, 387, 101, 2014 |
| 10 |
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters Jung S, Song KR, Lee SN, Kim H Advanced Materials, 25(32), 4470, 2013 |