검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films Yamashita T, Hayashi S, Naijo T, Momose K, Osawa H, Senzaki J, Kojima K, Kato T, Okumura H Journal of Crystal Growth, 490, 89, 2018 |
| 2 |
Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films Yamashita T, Hayashi S, Naijo T, Momose K, Osawa H, Senzaki J, Kojima K, Kato T, Okumura H Journal of Crystal Growth, 476, 99, 2017 |
| 3 |
Effects of dislocations on reliability of thermal oxides grown on n-type 4H-SiC wafer Senzaki J, Kojima K, Kato T, Shimozato A, Fukuda K Materials Science Forum, 483, 661, 2005 |
| 4 |
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama T, Watanabe T, Senzaki J, Kato M, Fukuda K, Shinohe T, Arai K Materials Science Forum, 483, 829, 2005 |
| 5 |
Effects of annealing conditions on resistance lowering of high-phosphorus-implanted 4H-SiC Senzaki J, Fukuda K, Arai K Materials Science Forum, 457-460, 901, 2004 |
| 6 |
Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy Narita K, Hijikata Y, Yaguchi H, Yoshida S, Senzaki J, Nakashima S Materials Science Forum, 457-460, 905, 2004 |
| 7 |
A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer Senzaki J, Goto M, Kojima K, Yamabe K, Fukuda K Materials Science Forum, 457-460, 1269, 2004 |
| 8 |
4H-SiC MOSFETs on C(000(-),1) face with inversion channel mobility of 127cm(2)/Vs Fukuda K, Kato M, Senzaki J, Kojima K, Suzuki T Materials Science Forum, 457-460, 1417, 2004 |
| 9 |
Epitaxial growth of (1120) 4H-SiC using substrate grown in the [1120] direction Kojima K, Ohno T, Senzaki J, Fukuda K, Fujimoto T, Katsuno M, Ohtani N, Nishino J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 195, 2002 |
| 10 |
Improvements in electrical properties of n-type-implanted 4H-SiC substrates using high-temperature rapid thermal annealing Senzaki J, Harada S, Kosugi R, Suzuki S, Fukuda K, Arai K Materials Science Forum, 389-3, 795, 2002 |