검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Growth of high Ge content SiGe on (110) oriented Si wafers Hikavyy A, Vanherle W, Vincent B, Dekoster J, Bender H, Moussa A, Witters L, Hoffman T, Loo R Thin Solid Films, 520(8), 3179, 2012 |
| 2 |
Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon Hasunuma E, Sugahara S, Hoshino S, Imai S, Ikeda K, Matsumura M Journal of Vacuum Science & Technology A, 16(2), 679, 1998 |