검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation Hu Q, Seo I, Zhang ZN, Lee SH, Kim HM, Kim SH, Kim YS, Lee HH, Xie YH, Kim KB, Yoon TS Thin Solid Films, 518, S217, 2010 |
| 2 |
Studying the impact of carbon on device performance for strained-Si MOSFETs Lee MH, Chang ST, Peng CY, Hsieh BF, Maikap S, Liao SH Thin Solid Films, 517(1), 105, 2008 |
| 3 |
Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique Sawano K, Fukumoto A, Hoshi Y, Nakagawa K, Shiraki Y Thin Solid Films, 517(1), 353, 2008 |
| 4 |
Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates Taoka N, Sakai A, Mochizuki S, Nakatsuka O, Ogawa M, Zaima S Thin Solid Films, 508(1-2), 147, 2006 |
| 5 |
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC Solid-State Electronics, 49(10), 1669, 2005 |
| 6 |
Relaxation mechanism of low temperature SiGe/Si(001) buffer layers Vescan L, Wickenhauser S Solid-State Electronics, 48(8), 1279, 2004 |
| 7 |
Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation Kuchenbecker J, Kibbel H, Muthsam P, Konig U Thin Solid Films, 389(1-2), 146, 2001 |
| 8 |
Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs Wohl G, Dudek V, Graf M, Kibbel H, Herzog HJ, Klose M Thin Solid Films, 369(1-2), 175, 2000 |