| 1 |
Mechanical property effects of Si-1 (-) Ge-x(x) channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide-semiconductor field effect transistors
Lee CC, Cheng HC, Hsu HW, Chen ZH, Teng HH, Liu CH
Thin Solid Films, 557, 316, 2014 |
| 2 |
HfO2 nanocrystal memory on SiGe channel
Lin YH, Chien CH
Solid-State Electronics, 80, 5, 2013 |
| 3 |
Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method
Usuda K, Tezuka T, Kosemura D, Tomita M, Ogura A
Solid-State Electronics, 83, 46, 2013 |
| 4 |
Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances
Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G
Solid-State Electronics, 85, 15, 2013 |
| 5 |
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
Flachowsky S, Herrmann T, Hontschel J, Illgen R, Ong SY, Wiatr M
Solid-State Electronics, 88, 27, 2013 |
| 6 |
Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
Liu LJ, Chang-Liao KS, Jian YC, Wang TK, Tsai MJ
Thin Solid Films, 533, 1, 2013 |
| 7 |
Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths
Hsu HW, Lin KC, Lee CC, Twu MJ, Huang HS, Chen SY, Peng MR, Teng HH, Liu CH
Thin Solid Films, 544, 120, 2013 |
| 8 |
SiGe channels for V-T control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond
Reichel C, Schoenekess J, Kronholz S, Beernink G, Zeun A, Dietel A, Kammler T
Thin Solid Films, 520(8), 3170, 2012 |
| 9 |
Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate
Reichel C, Kronholz S, Kammler T, Zeun A, Beernink G
Solid-State Electronics, 60(1), 134, 2011 |
| 10 |
Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer
Juang MH, Chang CW, Huang CW, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(3), 303, 2010 |
