| 1 |
Peculiarities of Si and SiO2 Etching Kinetics in HBr+Cl-2+O-2 Inductively Coupled Plasma
Lee BJ, Efremov A, Kim J, Kim C, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 339, 2019 |
| 2 |
Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma
Jeon MH, Mishra AK, Kang SK, Kim KN, Kim IJ, Lee SB, Sin TH, Yeom GY
Current Applied Physics, 13(8), 1830, 2013 |
| 3 |
실리콘 산화막의 플라즈마 식각에 대한 표면반응 모델링
임연호
Korean Chemical Engineering Research, 44(5), 520, 2006 |
| 4 |
Run-to-run control of inductively coupled C2F6 plasma etching of SiO2: Multivariable controller design and numerical application
Seo ST, Lee KS, Yang DR
Korean Journal of Chemical Engineering, 23(2), 199, 2006 |
| 5 |
Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a Computational Fluid Dynamics Code
Seo ST, Lee YH, Lee KS, Choi BK, Yang DR
Korean Journal of Chemical Engineering, 22(6), 822, 2005 |
| 6 |
Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching
Chung MJ, Lee DH, Yeom GY
Thin Solid Films, 420-421, 579, 2002 |
| 7 |
Effects of low-molecular-weight radicals for reduction of microloading in high-aspect contact-hole etching
Samukawa S, Mukai T
Thin Solid Films, 374(2), 235, 2000 |
| 8 |
SiO2 etching characteristics in DC magnetron plasmas by using an external magnetic held
Yamada H, Kuwahara K, Fujiyama H
Thin Solid Films, 316(1-2), 6, 1998 |
