| 1 |
Solid-phase epitaxy and pressure-induced topotaxy of the VO2 and V2O3 thin films on sapphire using annealing under uniaxial compression
Matsuda A, Nozawa Y, Kaneko S, Yoshimoto M
Applied Surface Science, 480, 956, 2019 |
| 2 |
Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing
Hayashi Y, Tanigawa K, Uesugi K, Shojiki K, Miyake H
Journal of Crystal Growth, 512, 131, 2019 |
| 3 |
Kinetics of autoepitaxial crystal growth in amorphous films of Cr2O3
Bagmut AG, Bagmut IA
Journal of Crystal Growth, 517, 68, 2019 |
| 4 |
MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire
Dinh DV, Amano H, Pristovsek M
Journal of Crystal Growth, 502, 14, 2018 |
| 5 |
Improvement mechanism of sputtered AlN films by high-temperature annealing
Xiao SY, Suzuki R, Miyake H, Harada S, Ujihara T
Journal of Crystal Growth, 502, 41, 2018 |
| 6 |
Solid-phase epitaxy of a cavity-shaped amorphous alumina nanomembrane structure on a sapphire substrate
Jang J, Yang D, Moon D, Choi D, Lim HJ, Kang SG, Bae D, Han HN, Park Y, Yoon E
Journal of Crystal Growth, 498, 130, 2018 |
| 7 |
High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire
Dinh DV, Hu N, Honda Y, Amano H, Pristovsek M
Journal of Crystal Growth, 498, 377, 2018 |
| 8 |
Self-organized growth and magnetic properties of epitaxial silicide nanoislands
Tripathi JK, Levy R, Camus Y, Dascalu M, Cesura F, Chalasani R, Kohn A, Markovich G, Goldfarb I
Applied Surface Science, 391, 24, 2017 |
| 9 |
CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0001) substrate
Hattori T, Ozawa M
Journal of Crystal Growth, 463, 90, 2017 |
| 10 |
The nucleation and growth mechanism of Ni-Sn eutectic in a single crystal superalloy
Jiang WG, Wang L, Li XW, Lou LH
Journal of Crystal Growth, 479, 75, 2017 |
