검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Hydrogen intercalation of CVD graphene on germanium (001) - Strain and doping analysis using Raman spectroscopy Judek J, Pasternak I, Dabrowski P, Strupinski W, Zdrojek M Applied Surface Science, 473, 203, 2019 |
| 2 |
Structural characterization of as-grown and quasi-free standing graphene layers on SiC Bueno RA, Palacio I, Munuera C, Aballe L, Foerster M, Strupinski W, Garcia-Hernandez M, Martin-Gago JA, Lopez MF Applied Surface Science, 466, 51, 2019 |
| 3 |
Effect of uniaxial stress on the electrochemical properties of graphene with point defects Szroeder P, Sagalianov IY, Radchenko TM, Tatarenko VA, Prylutskyy YI, Strupinski W Applied Surface Science, 442, 185, 2018 |
| 4 |
Influence of hydrogen intercalation on graphene/Ge(001)/Si(001) interface Grzonka J, Pasternak I, Michalowski PP, Kolkovsky V, Strupinski W Applied Surface Science, 447, 582, 2018 |
| 5 |
Growth of aluminium nitride with linear change of ammonia flow Caban P, Rudzinski M, Wojcik M, Gaca J, Strupinski W Journal of Crystal Growth, 414, 81, 2015 |
| 6 |
Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies Rudzinski M, Kudrawiec R, Patriarche G, Kucharski R, Caban P, Strupinski W Journal of Crystal Growth, 414, 87, 2015 |
| 7 |
Chlorine-enhanced thermal oxides growth and significant trap density reduction at SiO2/SiC interface by incorporation of phosphorus Krol K, Sochacki M, Strupinski W, Racka K, Guziewicz M, Konarski P, Misnik M, Szmidt J Thin Solid Films, 591, 86, 2015 |
| 8 |
The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates Teklinska D, Grodecki K, Jozwik-Biala I, Caban P, Olszyna A, Strupinski W Journal of Crystal Growth, 401, 542, 2014 |
| 9 |
Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors Chu BH, Nicolosi J, Lo CF, Strupinski W, Pearton SJ, Ren F Electrochemical and Solid State Letters, 14(7), K43, 2011 |
| 10 |
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E Journal of Crystal Growth, 315(1), 168, 2011 |