3C-SiC epitaxial layers were grown on on-axis (100)- and (110)-oriented silicon substrates in a RE heated horizontal hot-wall CVD reactor. We focused on the relationship between the pressure used during carbonization growth and the crystalline quality of obtained layers. A comprehensive analysis of the surface morphology of the 3C-SiC carbonization layer was performed, after which two pressure values guaranteeing top crystalline quality were determined. The carbonization layer with the lowest surface roughness was obtained at around 20 mbar, while for 30 mbar, the surface roughness was slightly worse but more homogenous. To sum up, we successfully grew 1.5 m-rt thick 3C-SiC layers on silicon substrates with both orientations using the said pressure conditions. (C) 2013 Elsevier B.V. All rights reserved.