검색결과 : 56건
| No. | Article |
|---|---|
| 1 |
4H-SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Balachandran A, Song HZ, Sudarshan TS, Chandrashekhar MVS Journal of Crystal Growth, 448, 97, 2016 |
| 2 |
Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Daniels KM, Obe A, Daas BK, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS Journal of the Electrochemical Society, 163(5), E130, 2016 |
| 3 |
Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M Journal of Crystal Growth, 418, 7, 2015 |
| 4 |
Mechanism of Electrochemical Hydrogenation of Epitaxial Graphene Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS Journal of the Electrochemical Society, 162(4), E37, 2015 |
| 5 |
Investigation on large-area fabrication of vivid shark skin with superior surface functions Chen HW, Zhang X, Ma LX, Che D, Zhang DY, Sudarshan TS Applied Surface Science, 316, 124, 2014 |
| 6 |
Influence of size of nanoparticles and plasma pressure compaction on microstructural development and hardness of bulk tungsten samples Srivatsan TS, Manigandan K, Petraroli M, Trejo RM, Sudarshan TS Advanced Powder Technology, 24(1), 190, 2013 |
| 7 |
Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 degrees off-axis 4H-SiC Song HZ, Sudarshan TS Journal of Crystal Growth, 371, 94, 2013 |
| 8 |
Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy Rana T, Chandrashekhar MVS, Sudarshan TS Journal of Crystal Growth, 380, 61, 2013 |
| 9 |
Challenges in Ceramic Science: A Report from the Workshop on Emerging Research Areas in Ceramic Science Rohrer GS, Affatigato M, Backhaus M, Bordia RK, Chan HM, Curtarolo S, Demkov A, Eckstein JN, Faber KT, Garay JE, Gogotsi Y, Huang LP, Jones LE, Kalinin SV, Lad RJ, Levi CG, Levy J, Maria JP, Mattos L, Navrotsky A, Orlovskaya N, Pantano C, Stebbins JF, Sudarshan TS, Tani T, Weil KS Journal of the American Ceramic Society, 95(12), 3699, 2012 |
| 10 |
Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers Song HZ, Rana T, Sudarshan TS Journal of Crystal Growth, 320(1), 95, 2011 |