검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon Liang JH, Wu CH Applied Surface Science, 310, 230, 2014 |
| 2 |
TCAD modeling and simulation of boron deactivation in NMOS carbon-implanted channel Mok KRC, Benistant F, Teo RS, Chu S Solid-State Electronics, 53(6), 658, 2009 |
| 3 |
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon Martin-Bragado I, Avci I, Zographos N, Jaraiz M, Castrillo P Solid-State Electronics, 52(9), 1430, 2008 |
| 4 |
Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature Chan HY, Srinivasan MP, Benistant F, Mok KR, Chan L, Jin HM Thin Solid Films, 504(1-2), 269, 2006 |
| 5 |
Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation Kim SD, Park CM, Woo JCS Solid-State Electronics, 49(1), 131, 2005 |
| 6 |
The deep boron level in high-voltage PiN diodes Aberg D, Hallen A, Osterman J, Zimmermann U, Svensson BG Materials Science Forum, 389-3, 1309, 2002 |
| 7 |
Doping of silicon carbide by ion implantation Svensson BG, Hallen A, Linnarsson MK, Kuznetsov AY, Janson MS, Aberg D, Osterman J, Persson POA, Hultman L, Storasta L, Carlsson FHC, Bergman JP, Jagadish C, Morvan E Materials Science Forum, 353-356, 549, 2001 |
| 8 |
Channel engineering using RTA prior to the gate oxidation for high density DRAM with single gate CMOS technology Son JH, Lee SH, Lee JS, Lee Y Solid-State Electronics, 45(1), 7, 2001 |
| 9 |
Epitaxy and device behaviour of collector-up SiGeHBTs with a partial p-type collector van den Oever LCM, Nanver LK, Scholtes TLM, van Zeijl HW, van Noort WD, Ren QW, Slotboom JW Solid-State Electronics, 45(11), 1899, 2001 |
| 10 |
Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics Malm BG, Grahn JV, Ostling M Solid-State Electronics, 44(10), 1747, 2000 |