| 1 |
Electron transfer during binding processes between thiolate molecules and Au nano-islands
Chen B, Liu CJ, Shang L, Huang Y, Yang SH, Sun XY, Feng CH, Hayashi K
Applied Surface Science, 473, 49, 2019 |
| 2 |
Exact identities between values of the tunnel current in the redox-mediated tunneling contacts and the positions of the extrema of the tunnel current/overvoltage characteristics
Medvedev IG
Journal of Electroanalytical Chemistry, 799, 333, 2017 |
| 3 |
Current Switching Coupled to Molecular Spin-States in Large-Area Junctions
Lefter C, Rat S, Costa JS, Manrique-Juarez MD, Quintero CM, Salmon L, Seguy I, Leichle T, Nicu L, Demont P, Rotaru A, Molnar G, Bousseksou A
Advanced Materials, 28(34), 7508, 2016 |
| 4 |
A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K
Kim H, Jung CY, Kim SH, Cho Y, Kim DW
Current Applied Physics, 16(1), 37, 2016 |
| 5 |
Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction
Kim H, Lee DH, Myung HS
Korean Journal of Materials Research, 26(8), 412, 2016 |
| 6 |
Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method
Toumi S, Ouennoughi Z, Strenger KC, Frey L
Solid-State Electronics, 122, 56, 2016 |
| 7 |
TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
Illarionov YY, Vexler MI, Karner M, Tyaginov SE, Cervenka J, Grasser T
Current Applied Physics, 15(2), 78, 2015 |
| 8 |
Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model
Banadaki YM, Srivastava A
Solid-State Electronics, 111, 80, 2015 |
| 9 |
A wire-form emitter metal-insulator-semiconductor tunnel junction
Vexler MI
Current Applied Physics, 14(3), 306, 2014 |
| 10 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 82, 86, 2013 |
