| 1 |
Two-dimensional amorphous heterostructures of Ag/a-WO3-x for high-efficiency photocatalytic performance
Ren YM, Li C, Xu Q, Yan J, Li YZ, Yuan PF, Xia HC, Niu CY, Yang XA, Jia Y
Applied Catalysis B: Environmental, 245, 648, 2019 |
| 2 |
Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
Chen BW, Yu EK, Chang TC, Kanicki J
Solid-State Electronics, 147, 51, 2018 |
| 3 |
Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films
Parkhomenko I, Vlasukova L, Komarov F, Milchanin O, Makhavikou M, Mudryi A, Zhivulko V, Zuk J, Kopycinski P, Murzalinov D
Thin Solid Films, 626, 70, 2017 |
| 4 |
Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD
Gunes I, Sel K
Thin Solid Films, 636, 85, 2017 |
| 5 |
What is the bandgap of kesterite?
Siebentritt S, Rey G, Finger A, Regesch D, Sendler J, Weiss TP, Bertram T
Solar Energy Materials and Solar Cells, 158, 126, 2016 |
| 6 |
Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films
Sel K, Gunes I
Thin Solid Films, 520(24), 7062, 2012 |
| 7 |
Band tail states and free electrons in phosphorus doped microcrystalline silicon studied by ESR
Lips K, Kanschat R, Brehme S, Fuhs W
Thin Solid Films, 403-404, 47, 2002 |
| 8 |
A new analytical model for amorphous-silicon thin-film transistors including tail and deep states
Colalongo L
Solid-State Electronics, 45(9), 1525, 2001 |
