화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping
Sasaki T, Takahasi M
Journal of Crystal Growth, 512, 33, 2019
2 Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction
Sasaki T, Takahasi M
Journal of Crystal Growth, 468, 135, 2017
3 Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)
Deki R, Sasaki T, Takahasi M
Journal of Crystal Growth, 468, 241, 2017
4 In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE
Sasaki T, Takahasi M, Suzuki H, Ohshita Y, Yamaguchi M
Journal of Crystal Growth, 425, 13, 2015
5 Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy (vol 323, pg 13, 2011)
Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M
Journal of Crystal Growth, 387, 124, 2014
6 Quantitative monitoring of InAs quantum dot growth using X-ray diffraction
Takahasi M
Journal of Crystal Growth, 401, 372, 2014
7 In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)
Takahasi M, Nakata Y, Suzuki H, Ikeda K, Kozu M, Hu W, Ohshita Y
Journal of Crystal Growth, 378, 34, 2013
8 Stepwise acquisition of vocal combinatorial capacity in songbirds and human infants
Lipkind D, Marcus GF, Bemis DK, Sasahara K, Jacoby N, Takahasi M, Suzuki K, Feher O, Ravbar P, Okanoya K, Tchernichovski O
Nature, 498(7452), 104, 2013
9 Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M
Journal of Crystal Growth, 323(1), 13, 2011
10 In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy
Takahasi M, Kaizu T
Journal of Crystal Growth, 311(7), 1761, 2009