1 |
Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping Sasaki T, Takahasi M Journal of Crystal Growth, 512, 33, 2019 |
2 |
Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction Sasaki T, Takahasi M Journal of Crystal Growth, 468, 135, 2017 |
3 |
Strain relaxation and compositional separation during growth of InGaAs/GaAs(001) Deki R, Sasaki T, Takahasi M Journal of Crystal Growth, 468, 241, 2017 |
4 |
In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE Sasaki T, Takahasi M, Suzuki H, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 425, 13, 2015 |
5 |
Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy (vol 323, pg 13, 2011) Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 387, 124, 2014 |
6 |
Quantitative monitoring of InAs quantum dot growth using X-ray diffraction Takahasi M Journal of Crystal Growth, 401, 372, 2014 |
7 |
In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001) Takahasi M, Nakata Y, Suzuki H, Ikeda K, Kozu M, Hu W, Ohshita Y Journal of Crystal Growth, 378, 34, 2013 |
8 |
Stepwise acquisition of vocal combinatorial capacity in songbirds and human infants Lipkind D, Marcus GF, Bemis DK, Sasahara K, Jacoby N, Takahasi M, Suzuki K, Feher O, Ravbar P, Okanoya K, Tchernichovski O Nature, 498(7452), 104, 2013 |
9 |
Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 323(1), 13, 2011 |
10 |
In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy Takahasi M, Kaizu T Journal of Crystal Growth, 311(7), 1761, 2009 |