검색결과 : 23건
No. | Article |
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1 |
Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks Tanabe Y, Ito Y, Sugawara K, Hojo D, Koshino M, Fujita T, Aida T, Xu XD, Huynh KK, Shimotani H, Adschiri T, Takahashi T, Tanigaki K, Aoki H, Chen MW Advanced Materials, 28(46), 10304, 2016 |
2 |
Multifunctional Porous Graphene for High-Efficiency Steam Generation by Heat Localization Ito Y, Tanabe Y, Han JH, Fujita T, Tanigaki K, Chen MW Advanced Materials, 27(29), 4302, 2015 |
3 |
Bicontinuous Nanoporous N-doped Graphene for the Oxygen Reduction Reaction Ito Y, Qiu HJ, Fujita T, Tanabe Y, Tanigaki K, Chen MW Advanced Materials, 26(24), 4145, 2014 |
4 |
p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy Tang J, Kumashiro R, Ju J, Li ZF, Avila MA, Suekuni K, Takabatake T, Guo F, Kobayashi K, Tanigaki K Chemical Physics Letters, 472(1-3), 60, 2009 |
5 |
p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy (vol 472, pg 60, 2009) Tang J, Kumashiro R, Ju J, Li ZF, Avila MA, Suekuni K, Takabatake T, Guo FZ, Kobayashi K, Tanigaki K Chemical Physics Letters, 473(1-3), 211, 2009 |
6 |
Nanorods of endohedral metallofullerene derivative Tsuchiya T, Kumashiro R, Tanigaki K, Matsunaga Y, Ishitsuka MO, Wakahara T, Maeda Y, Takano Y, Aoyagi M, Akasaka T, Liu MTH, Kato T, Suenaga K, Jeong JS, Iijima S, Kimura F, Kimura T, Nagase S Journal of the American Chemical Society, 130(2), 450, 2008 |
7 |
Switchable semiconductive property of the polyhydroxylated metallofullerene Tang J, Xing GM, Zhao YL, Jing L, Yuan H, Zhao F, Gao XY, Qian HJ, Su R, Ibrahim K, Chu WG, Zhang L, Tanigaki K Journal of Physical Chemistry B, 111(41), 11929, 2007 |
8 |
Preparation and electronic states of Na16Ba8Si136 clathrate Rachi T, Tanigaki K, Kumashiro R, Winter J, Kuzmany H Chemical Physics Letters, 409(1-3), 48, 2005 |
9 |
C-60 field effect transistor with electrodes modified by La@C-82 Hiroshiba N, Tanigaki K, Kumashiro R, Ohashi H, Wakahara T, Akasaka T Chemical Physics Letters, 400(1-3), 235, 2004 |
10 |
N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit Kanbara T, Shibata K, Fujiki S, Kubozono Y, Kashino S, Urisu T, Sakai M, Fujiwara A, Kumashiro R, Tanigaki K Chemical Physics Letters, 379(3-4), 223, 2003 |