화학공학소재연구정보센터
검색결과 : 23건
No. Article
1 Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks
Tanabe Y, Ito Y, Sugawara K, Hojo D, Koshino M, Fujita T, Aida T, Xu XD, Huynh KK, Shimotani H, Adschiri T, Takahashi T, Tanigaki K, Aoki H, Chen MW
Advanced Materials, 28(46), 10304, 2016
2 Multifunctional Porous Graphene for High-Efficiency Steam Generation by Heat Localization
Ito Y, Tanabe Y, Han JH, Fujita T, Tanigaki K, Chen MW
Advanced Materials, 27(29), 4302, 2015
3 Bicontinuous Nanoporous N-doped Graphene for the Oxygen Reduction Reaction
Ito Y, Qiu HJ, Fujita T, Tanabe Y, Tanigaki K, Chen MW
Advanced Materials, 26(24), 4145, 2014
4 p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy
Tang J, Kumashiro R, Ju J, Li ZF, Avila MA, Suekuni K, Takabatake T, Guo F, Kobayashi K, Tanigaki K
Chemical Physics Letters, 472(1-3), 60, 2009
5 p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy (vol 472, pg 60, 2009)
Tang J, Kumashiro R, Ju J, Li ZF, Avila MA, Suekuni K, Takabatake T, Guo FZ, Kobayashi K, Tanigaki K
Chemical Physics Letters, 473(1-3), 211, 2009
6 Nanorods of endohedral metallofullerene derivative
Tsuchiya T, Kumashiro R, Tanigaki K, Matsunaga Y, Ishitsuka MO, Wakahara T, Maeda Y, Takano Y, Aoyagi M, Akasaka T, Liu MTH, Kato T, Suenaga K, Jeong JS, Iijima S, Kimura F, Kimura T, Nagase S
Journal of the American Chemical Society, 130(2), 450, 2008
7 Switchable semiconductive property of the polyhydroxylated metallofullerene
Tang J, Xing GM, Zhao YL, Jing L, Yuan H, Zhao F, Gao XY, Qian HJ, Su R, Ibrahim K, Chu WG, Zhang L, Tanigaki K
Journal of Physical Chemistry B, 111(41), 11929, 2007
8 Preparation and electronic states of Na16Ba8Si136 clathrate
Rachi T, Tanigaki K, Kumashiro R, Winter J, Kuzmany H
Chemical Physics Letters, 409(1-3), 48, 2005
9 C-60 field effect transistor with electrodes modified by La@C-82
Hiroshiba N, Tanigaki K, Kumashiro R, Ohashi H, Wakahara T, Akasaka T
Chemical Physics Letters, 400(1-3), 235, 2004
10 N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit
Kanbara T, Shibata K, Fujiki S, Kubozono Y, Kashino S, Urisu T, Sakai M, Fujiwara A, Kumashiro R, Tanigaki K
Chemical Physics Letters, 379(3-4), 223, 2003