검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements Kriso C, Triozon F, Delerue C, Schneider L, Abbate F, Nolot E, Rideau D, Niquet YM, Mugny G, Tavernier C Solid-State Electronics, 129, 93, 2017 |
| 2 |
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Essa Z, Pelletier B, Morin P, Boulenc P, Pakfar A, Tavernier C, Wacquant F, Zechner C, Juhel M, Autran JL, Cristiano F Solid-State Electronics, 126, 163, 2016 |
| 3 |
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T Solid-State Electronics, 88, 9, 2013 |
| 4 |
Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects Zaka A, Singer J, Dornel E, Garetto D, Rideau D, Rafhay Q, Clerc R, Manceau JP, Degors N, Boccaccio C, Tavernier C, Jaouen H Solid-State Electronics, 63(1), 158, 2011 |
| 5 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices Zaka A, Rafhay Q, Iellina M, Palestri P, Clerc R, Rideau D, Garetto D, Dornel E, Singer J, Pananakakis G, Tavernier C, Jaouen H Solid-State Electronics, 54(12), 1669, 2010 |
| 6 |
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs Bazizi EM, Pakfar A, Fazzini PF, Cristiano F, Tavernier C, Claverie A, Zographos N, Zechner C, Scheid E Thin Solid Films, 518(9), 2427, 2010 |
| 7 |
Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys Michaillat M, Rideau D, Aniel F, Tavernier C, Jaouen H Thin Solid Films, 518(9), 2437, 2010 |
| 8 |
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H Solid-State Electronics, 53(4), 452, 2009 |