| 1 |
Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O
Lu GQ, Tedder LL, Rubloff GW
Journal of Vacuum Science & Technology B, 17(4), 1417, 1999 |
| 2 |
Real-Time Process Sensing and Metrology in Amorphous and Selective-Area Silicon Plasma-Enhanced Chemical-Vapor-Deposition Using in-Situ Mass-Spectrometry
Chowdhury AI, Read WW, Rubloff GW, Tedder LL, Parsons GN
Journal of Vacuum Science & Technology B, 15(1), 127, 1997 |
| 3 |
Dynamic Rate and Thickness Metrology During Poly-Si Rapid Thermal Chemical-Vapor-Deposition from SiH4 Using Real-Time in-Situ Mass-Spectrometry
Tedder LL, Rubloff GW, Cohaghan BF, Parsons GN
Journal of Vacuum Science & Technology A, 14(2), 267, 1996 |
| 4 |
Dynamic Rate and Thickness Metrology During Poly-Si Rapid Thermal Chemical-Vapor-Deposition from SiH4 Using Real-Time in-Situ Mass-Spectrometry (Vol 14, Pg 267, 1996)
Tedder LL, Rubloff GW, Conaghan BF, Parsons GN
Journal of Vacuum Science & Technology A, 14(4), 2680, 1996 |
| 5 |
Real-Time Process and Product Diagnostics in Rapid Thermal Chemical-Vapor-Deposition Using in-Situ Mass-Spectrometric Sampling
Tedder LL, Rubloff GW, Shareef I, Anderle M, Kim DH, Parsons GN
Journal of Vacuum Science & Technology B, 13(4), 1924, 1995 |
