검색결과 : 6건
No. | Article |
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1 |
Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G Journal of Vacuum Science & Technology A, 25(4), 850, 2007 |
2 |
Bismuth surfactant growth of the dilute nitride GaNxAs1-x Young EC, Tixier S, Tiedje T Journal of Crystal Growth, 279(3-4), 316, 2005 |
3 |
Surfactant enhanced growth of GaNAs and InGaNAs using bismuth Tixier S, Adamcyk M, Young EC, Schmid JH, Tiedje T Journal of Crystal Growth, 251(1-4), 449, 2003 |
4 |
Faceting transition in epitaxial growth of dilute GaNAs films on GaAs Adamcyk M, Tixier S, Ruck BJ, Schmid JH, Tiedje T, Fink V, Jeffries M, Karaiskaj D, Kavanagh KL, Thewalt M Journal of Vacuum Science & Technology B, 19(4), 1417, 2001 |
5 |
Hardness enhancement of sputtered Ni3Al/Ni multilayers Tixier S, Boni P, Van Swygenhoven H Thin Solid Films, 342(1-2), 188, 1999 |
6 |
Structural coherence of sputtered Ni3Al/Ni multilayers Tixier S, Boni P, Van Swygenhoven H Journal of Vacuum Science & Technology A, 16(4), 2429, 1998 |