화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source
Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G
Journal of Vacuum Science & Technology A, 25(4), 850, 2007
2 Bismuth surfactant growth of the dilute nitride GaNxAs1-x
Young EC, Tixier S, Tiedje T
Journal of Crystal Growth, 279(3-4), 316, 2005
3 Surfactant enhanced growth of GaNAs and InGaNAs using bismuth
Tixier S, Adamcyk M, Young EC, Schmid JH, Tiedje T
Journal of Crystal Growth, 251(1-4), 449, 2003
4 Faceting transition in epitaxial growth of dilute GaNAs films on GaAs
Adamcyk M, Tixier S, Ruck BJ, Schmid JH, Tiedje T, Fink V, Jeffries M, Karaiskaj D, Kavanagh KL, Thewalt M
Journal of Vacuum Science & Technology B, 19(4), 1417, 2001
5 Hardness enhancement of sputtered Ni3Al/Ni multilayers
Tixier S, Boni P, Van Swygenhoven H
Thin Solid Films, 342(1-2), 188, 1999
6 Structural coherence of sputtered Ni3Al/Ni multilayers
Tixier S, Boni P, Van Swygenhoven H
Journal of Vacuum Science & Technology A, 16(4), 2429, 1998