화학공학소재연구정보센터
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No. Article
1 Monochlorosilane for Low Temperature Silicon Epitaxy
Tomasini P, Weeks KD
Journal of the Electrochemical Society, 158(5), H604, 2011
2 Enabling Moore's Law beyond CMOS technologies through heteroepitaxy
Thomas SG, Tomasini P, Bauer M, Vyne B, Zhang Y, Givens M, Devrajan J, Koester S, Lauer I
Thin Solid Films, 518, S53, 2010
3 Analysis of silicon germanium vapor phase epitaxy kinetics
Tomasini P, Machkaoutsan V, Thomas SG
Thin Solid Films, 518, S12, 2010
4 Stability of silicon germanium stressors
Tomasini P, Machkaoutsan V, Thomas SG, Loo R, Caymax M, Verheyen P
Thin Solid Films, 518, S133, 2010
5 Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP
Prior KA, Telfer SA, Tang X, Morhain C, Urbaszek B, O'Donnell C, Tomasini P, Balocchi A, Cavenett BC
Journal of Crystal Growth, 227, 655, 2001
6 Growth and optimization of InAs/GaSb and GaSb/InAs interfaces
Tahraoui A, Tomasini P, Lassabatere L, Bonnet J
Applied Surface Science, 162, 425, 2000
7 MBE growth of ZnS and ZnCdS layers on GaP
Telfer SA, Morhain C, Urbaszek B, O'Donnell C, Tomasini P, Balocchi A, Prior KA, Cavenett BC
Journal of Crystal Growth, 214, 197, 2000