검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
ISDRS 2016 special issue foreword Iliadis AA, Akturk A, Tompkins RP Solid-State Electronics, 136, 1, 2017 |
| 2 |
Design and characterization of GaN p-i-n diodes for betavoltaic devices Khan MR, Smith JR, Tompkins RP, Kelley S, Litz M, Russo J, Leathersich J, Shahedipour-Sandvik F, Jones KA, Iliadis A Solid-State Electronics, 136, 24, 2017 |
| 3 |
Electrical properties of AlGaN/GaN HEMTs in stretchable geometries Tompkins RP, Mahaboob I, Shahedipour-Sandvik F, Lazarus N Solid-State Electronics, 136, 36, 2017 |
| 4 |
HVPE GaN for high power electronic Schottky diodes Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Mulholland G, Metzger R, Leach JH, Suvarna P, Tungare M, Shahedipour-Sandvik F Solid-State Electronics, 79, 238, 2013 |
| 5 |
DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN Shah PB, Dedhia RH, Tompkins RP, Viveiros EA, Jones KA Solid-State Electronics, 78, 121, 2012 |
| 6 |
Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn1-xMgxSe grown by molecular beam epitaxy VanMil BL, Tompkins RP, Feng K, Swartz CH, Giles NC, Myers TH Journal of Vacuum Science & Technology B, 23(4), 1814, 2005 |
| 7 |
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements Swartz CH, Tompkins RP, Giles NC, Myers TH, Lu H, Schaff WJ, Eastman LF Journal of Crystal Growth, 269(1), 29, 2004 |