화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Optical and transport properties of chromium-doped CdSe and CdS0.67Se0.33 crystals
Kasiyan V, Dashevsky Z, Shneck R, Towe E
Journal of Crystal Growth, 290(1), 50, 2006
2 InAs/GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy
Pal D, Walker J, Towe E
Journal of Vacuum Science & Technology B, 24(3), 1532, 2006
3 Uniformly doped InAs/GaAs quantum-dot infrared photodetector structures
Pal D, Towe E
Journal of Vacuum Science & Technology B, 23(3), 1132, 2005
4 Characteristics of InAs "dots-in-a-graded-well"
Chen L, Pal D, Towe E
Journal of Crystal Growth, 251(1-4), 208, 2003
5 Enchanced 1.3-mu m-emission from InAs quantum dots embedded in symmetric (In,Ga)As quantum-well structures
Chen L, Stoleru VG, Pan D, Towe E
Journal of Crystal Growth, 242(3-4), 263, 2002
6 Injection lasers based on intraband carrier transitions
Towe E, Pal D, Vorobjev LE, Glukhovskoy AV, Danilov SN, Zerova VL, Panevin VY, Firsuv DA, Shalygin VA, Zegrya GG, Weber A, Grundmann M
Materials Science Forum, 384-3, 209, 2002
7 Characterization of (In,Ga,Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction
Pal D, Pan D, Towe E, Chen SJ
Journal of Crystal Growth, 233(1-2), 34, 2001
8 X-Valley Related Luminescence from AlAs/(Al,Ga) as Quantum-Well Structures Grown on (112)B GaAs Substrates
Henderson RH, Towe E
Journal of Vacuum Science & Technology B, 14(3), 2309, 1996
9 Study of Lattice-Mismatched (in,Ga)as/GaAs Heterostructures on the Unconventional (110) GaAs Surface
Sun DC, Towe E, Bennett BR
Journal of Vacuum Science & Technology B, 12(2), 1095, 1994
10 Growth of the (in,Al,Ga)as Quaternary Alloy System on GaAs at Low Substrate Temperatures by Molecular-Beam Epitaxy
Towe E, Sun D, Bennett BR
Journal of Vacuum Science & Technology B, 12(2), 1099, 1994