화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical
Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK
Materials Science Forum, 389-3, 683, 2002
2 Characterization of 3C-SiC/6H-SiC heterostructures grown by vacuum sublimation
Savkina NS, Strel'chuk AM, Sorokin LM, Mosina GN, Tregubova AS, Solov'ev VV, Lebedev AA
Materials Science Forum, 433-4, 293, 2002
3 Investigation of p-3C-SiC/n+-6H-SiC heterojunctions with low doped p-3C-SiC region
Lebedev AA, Strel'chuk AM, Savkina NS, Bogdanova EV, Tregubova AS, Kuznetsov AN, Davydov DV
Materials Science Forum, 433-4, 427, 2002
4 Role of the defects under porous silicon carbide formation
Savkina NS, Sorokin LM, Hutchison JL, Sloan J, Tregubova AS, Mosina GN, Shuman VB, Ratnikov VV
Applied Surface Science, 184(1-4), 252, 2001
5 Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates
Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Solov'ev VA, Poletaev NK
Applied Surface Science, 184(1-4), 419, 2001
6 Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy
Davydov DV, Lebedev AA, Tregubova AS, Kozlovski VV, Kuznetsov AN, Bogdanova EV
Materials Science Forum, 338-3, 221, 2000
7 Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
Kalinina EV, Zubrilov AS, Kuznetsov NI, Nikitina IP, Tregubova AS, Shcheglov MP, Bratus VY
Materials Science Forum, 338-3, 497, 2000
8 Structural and optical studies of low-doped n-6H SiC layers grown by vacuum sublimation
Savkina NS, Lebedev AA, Tregubova AS, Scheglov MP
Materials Science Forum, 338-3, 509, 2000