| 1 |
RETRACTION: Retraction of Current Conduction Mechanisms through Au/SnO/n-type Si/In Devices (Retraction of Vol 611, Pg 1, 2016)
Tsao HY, Wang YW
Thin Solid Films, 665, 193, 2018 |
| 2 |
RETRACTION: Current Conduction Mechanism through Au/SnO/n-type Si/In Devices (Retraction of Vol 611, Pg 1, 2016)
Tsao HY, Wang YW
Thin Solid Films, 665, 199, 2018 |
| 3 |
Current conduction mechanisms through Au/SnO/n-type Si/In devices
Tsao HY, Wang YW
Thin Solid Films, 611, 1, 2016 |
| 4 |
Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications
Tsao HY, Wang YW, Gao ZK
Thin Solid Films, 612, 61, 2016 |
| 5 |
Ambient-Stable, Annealing-Free, and Ambipolar Organic Field-Effect Transistors Based on Solution-Processable Poly(2,2'-bis(trifluoromethyl)biphenyl-alt-2,5-divinylthiophene) without Long Alkyl Side Chains
Chiang CJ, Chen JC, Tsao HY, Wu KY, Wang CL
Advanced Functional Materials, 25(4), 606, 2015 |
| 6 |
Effects of a metallic front gate on the temperature-dependent electronic property of pentacene films
Lin YJ, Tsao HY, Liu DS
Materials Chemistry and Physics, 148(1-2), 431, 2014 |
| 7 |
Dependence of photocurrent of poly(3-hexylthiophene)/n-type Si diodes upon incorporation of ZnO nanoparticles
Lin YJ, Chin YM, Tsao HY
Thin Solid Films, 550, 554, 2014 |
| 8 |
Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol-gel and thermally grown methods
Dai CJ, Tsao HY, Lin YJ, Liu DS
Thin Solid Films, 552, 159, 2014 |
