화학공학소재연구정보센터
검색결과 : 63건
No. Article
1 Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
Horiuchi T, Wang L, Sekimoto A, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 517, 59, 2019
2 Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method
Wang L, Horiuchi T, Sekimoto A, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 520, 72, 2019
3 Improvement mechanism of sputtered AlN films by high-temperature annealing
Xiao SY, Suzuki R, Miyake H, Harada S, Ujihara T
Journal of Crystal Growth, 502, 41, 2018
4 Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC
Wang L, Horiuchi T, Sekimoto A, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 498, 140, 2018
5 Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents
Komatsu N, Mitani T, Hayashi Y, Kato T, Harada S, Ujihara T, Okumura H
Journal of Crystal Growth, 458, 37, 2017
6 Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation
Yamamoto T, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 470, 75, 2017
7 Phase transition process in DDAB supported lipid bilayer
Isogai T, Nakada S, Yoshida N, Sumi H, Tero R, Harada S, Ujihara T, Tagawa M
Journal of Crystal Growth, 468, 88, 2017
8 Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor
Matsumoto M, Saitou H, Takeuchi Y, Harada S, Tagawa M, Ujihara T
Journal of Crystal Growth, 468, 576, 2017
9 Two-step SiC solution growth for dislocation reduction
Murayama K, Hori T, Harada S, Xiao S, Tagawa M, Ujihara T
Journal of Crystal Growth, 468, 874, 2017
10 Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method
Yamamoto T, Adkar N, Okano Y, Ujihara T, Dost S
Journal of Crystal Growth, 474, 50, 2017