검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
2 dimensional electron gas uniformity of GaN HFET layers on SiC Wallis DJ, Wright PJ, Soley DEJ, Koker L, Uren MJ, Martin T Journal of Crystal Growth, 338(1), 125, 2012 |
| 2 |
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances Simms RJT, Uren MJ, Martin T, Powell J, Forsberg U, Lundskog A, Kakanakova-Georgieva A, Janzen E, Kuball M Solid-State Electronics, 55(1), 5, 2011 |
| 3 |
Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance Manoi A, Pomeroy JW, Lossy R, Pazirandeh R, Wurfl J, Uren MJ, Martin T, Kuball M Solid-State Electronics, 57(1), 14, 2011 |
| 4 |
DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT Bawedin M, Uren MJ, Udrea F Solid-State Electronics, 54(6), 616, 2010 |
| 5 |
High temperature performance of AlGaN/GaN HEMTs on Si substrates Tan WS, Uren MJ, Fry PW, Houston PA, Balmer RS, Martin T Solid-State Electronics, 50(3), 511, 2006 |
| 6 |
Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs Wells AM, Uren MJ, Balmer RS, Hilton KP, Martin T, Missous M Solid-State Electronics, 49(2), 279, 2005 |
| 7 |
Surface control of 4H-SiC MESFETs Hilton KP, Uren MJ, Hayes DG, Johnson HK, Wilding PJ Materials Science Forum, 389-3, 1387, 2002 |
| 8 |
Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI Benson J, Redman-White W, D'Halleweyn NV, Easson CA, Uren MJ Solid-State Electronics, 46(4), 529, 2002 |
| 9 |
Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs Uren MJ, Lee D, Hughes BT, Parmiter PJM, Birbeck JC, Balmer R, Martin T, Wallis RH, Jones SK Journal of Crystal Growth, 230(3-4), 579, 2001 |
| 10 |
A simple non-destructive technique to detect micropipes in silicon carbide Morrison DJ, Keir A, Preston IH, Hilton KP, Uren MJ, Johnson CM Materials Science Forum, 353-356, 303, 2001 |