검색결과 : 4건
No. | Article |
---|---|
1 |
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C Journal of Crystal Growth, 310(17), 3983, 2008 |
2 |
OMVPE of GaAsSbN for long wavelength emission on GaAs Peake GM, Waldrip KE, Hargett TW, Modine NA, Serkland DK Journal of Crystal Growth, 261(2-3), 398, 2004 |
3 |
Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates Cederberg JG, Waldrip KE, Peake GM Journal of Crystal Growth, 272(1-4), 588, 2004 |
4 |
GaN bipolar junction transistors with regrown emitters Zhang AP, Han J, Ren F, Waldrip KE, Abernathy CR, Luo B, Dang G, Johnson JW, Lee KP, Pearton SJ Electrochemical and Solid State Letters, 4(5), G39, 2001 |