화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy
Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C
Journal of Crystal Growth, 310(17), 3983, 2008
2 OMVPE of GaAsSbN for long wavelength emission on GaAs
Peake GM, Waldrip KE, Hargett TW, Modine NA, Serkland DK
Journal of Crystal Growth, 261(2-3), 398, 2004
3 Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates
Cederberg JG, Waldrip KE, Peake GM
Journal of Crystal Growth, 272(1-4), 588, 2004
4 GaN bipolar junction transistors with regrown emitters
Zhang AP, Han J, Ren F, Waldrip KE, Abernathy CR, Luo B, Dang G, Johnson JW, Lee KP, Pearton SJ
Electrochemical and Solid State Letters, 4(5), G39, 2001